key components
Offers for our R&D + Pilot Systems and for the upgrading of sytems delivered by us:
Sputter / Ion etching
Inverse HF Sputter Etcher, circular
ISE-A100, ISA-A200, ISA-A300
Process: substrate pre-treatment; etching rate for oxides: (1...5) m/min
Excitation: capacitive, HF
Frequency: 13,56 MHz
Design/installation conditions/application area:
- Hollow cathode aperture diameter: 100, 200 or 300 mm
- Built-on source; power (0.5...1.5) kW
- Grid transparency approx. 44%
- Process pressure (4...8)·10-3 mbar
Inverse HF Sputter Etcher, rectangular
ISE-R400, ISE-R700
Process: substrate pre-treatment; etching rate for oxides: (1...5) m/min
Excitation: capacitive, HF
Frequency: 13,56 MHz
Design/installation conditions/application area:
- Aperture dimensions of the hollow cathode: (400...700) mm x 150 mm
- Built-on source; power (1.5...3.0) kW
- Grid transparency approx. 44%
- Process pressure (1·10-1...4 ·10-3) mbar
Linear Ion Source
LION420, LION720
Process: substrate pre-treatment
Excitation: DC
Frequency:
- Race track length: (400 / 700) mm
- Built-on source
- Anode voltage 3.3 kV
- Power (1.5...3.0) kW
- Process pressure (1·10-1...4 ·10-3) mbar
Planar Hollow Cathode, circular
FP PT200
Process: hydrogen plasma passivation of Poly-Si
Excitation: LF or HF
Frequency: 0,040 bzw. 13,56 MHz
