CVD, PECVD or ALD of ZrO, TiO and Al2O3 using organometallic precursors for fuel cells
Processing of substrates (100 x 100) mm2 or Ø 6“, 1-4 mm thick, ≤ 1000 g, substrate face-up processing mode
R&D
Technology
Substrate Pre-treatment
Substrate front-side heating in the load lock chamber up to 130 oC
Substrate back-side heating in the process chamber, electrode surface temperature up to 550 oC
Deposition
CVD
PECVD
ALD (Atomic Layer Deposition)
Equipment
Entry/Exit Load Lock Chamber
Stainless steel chamber
Hydrocarbon-free vacuum pumping system
Linear substrate transfer system
Radiation substrate heater with Pyrometer
CVD Chamber
Stainless steel chamber
Hydrocarbon-free vacuum pumping system, control pendulum valve
HF electrode with shower head and heater
Substrate carrier with heater and lift system
13-line gas supply system with gas box, 4 liquid precursor supply systems, ALD valves, pipe jacket heater, inert atmosphere control of liquid precursors